http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106299015-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0352 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-107 |
| filingDate | 2016-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106299015-B |
| titleOfInvention | A kind of avalanche semiconductor photodetector using low-dimensional quantum point dynode layer |
| abstract | The present invention relates to a kind of avalanche semiconductor photodetector using low-dimensional quantum point dynode layer, if include dried layer quantum dot layer in the dynode layer of avalanche semiconductor photodetector, the quantum dot layer has the energy gap more narrower than dynode layer, and forms I type band structures with multiplication layer material.Gain coefficient of the present invention is obviously improved, excess noise is inhibited, it is horizontal to can be widely applied to strengthen the avalanche probe systematic difference such as the avalanche probe performance of the different-wavebands such as Si Ge, GaAs InAs, InP InGaAs, InAlAs InGaAs, GaAs AlSb, lifting high speed optical communication, single photon counting, laser radar, quantum information. |
| priorityDate | 2016-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.