http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106298879-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2016-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106298879-B |
| titleOfInvention | The production method of top-gated and vertical structure TFT |
| abstract | The present invention relates to field of semiconductor manufacture, more particularly to active layer material, thin film transistor (TFT) and vertical and top gate structure TFT production method, its molecular formula is (AO) x (BO) y (Ta2O5) z, wherein 0.70≤x+y≤0.99,0.01≤z≤0.30, and x+y+2z=1.A is gallium, silicon, aluminium, magnesium, tantalum, hafnium, ytterbium, nickel, zirconium, tin, phosphorus, vanadium, arsenic, titanium, lead, any one in potassium or lanthanide series rare-earth elements or two or more any combination, B is any combination of any one or two kinds in indium or tin, metal-oxide semiconductor (MOS) active layer material is due to mixing Ta element, the process window of channel production is effectively expanded, to obtain high performance metal oxide thin-film transistor, 1, the metal oxide semiconductor material for mixing tantalum can bear higher technological temperature, such as the depositing temperature of PECVD passivation layer process, still it is able to maintain preferable TFT characteristic, 2, the metal oxide semiconductor material for mixing tantalum can also be reasonably resistant to plasma bombardment effect, the device stability of thin film transistor (TFT) can greatly be improved. |
| priorityDate | 2016-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.