http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106298777-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66409 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2016-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106298777-B |
| titleOfInvention | A GGNMOS device used as ESD protection and its manufacturing method |
| abstract | The invention discloses a GGNMOS device used for ESD protection and a manufacturing method thereof. A P-type doping region is arranged in the extension region of the drain end of the GGNMOS to form a floating reverse direction with the NLDD doping region of the drain end. A diode is used to change the distribution of the ESD current at the drain terminal, so that the ESD discharge current deviates from the surface of the extension area of the drain terminal and the conduction channel, thereby improving the heat dissipation capability of the GGNMOS during ESD leakage, and improving the device when the hysteresis effect occurs. The secondary breakdown current of the GGNMOS device improves the ESD protection capability of the GGNMOS device. |
| priorityDate | 2016-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.