| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28247 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate |
2016-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ab0b2a1e46431f2dec44975c2ec3887
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9f30eaf52f74b842ea833e454cde793 |
| publicationDate |
2016-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-106252411-A |
| titleOfInvention |
The structure of semiconductor device structure and forming method |
| abstract |
The invention provides structure and the forming method of semiconductor device structure.Semiconductor device structure includes the gate stack being positioned at semiconductor substrate and is positioned at the protection element above gate stack.The top of protection element is wider than the bottom of protection element.Semiconductor device structure also includes the spacer element above the sidewall of side and the gate stack being positioned at protection element.Semiconductor device structure also includes the conductive contact piece being electrically connected to the conductive component of semiconductor substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109841563-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109841563-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11380542-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741689-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109285808-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10930785-B2 |
| priorityDate |
2015-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |