http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106241811-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-60 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 |
| filingDate | 2016-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106241811-B |
| titleOfInvention | A kind of preparation method of low temperature liquid phase production micro nano structure |
| abstract | The invention discloses a kind of preparation methods of low temperature liquid phase production micro nano structure, it includes the following steps: 1) to deposit one layer of thin metal layer or metal nanoparticle on silicon wafer or silicon powder；2) silicon wafer that deposited metal or silicon powder are put into the container equipped with high boiling alkane；3) lead to inert gas into container to keep inert gas atmosphere, until product preparation terminates；4) container is heated to 200-550 DEG C, kept for 1 minute or more；5) 30 DEG C of temperature or more are cooled to, the alkane containing silicon powder and liquid is poured out into filtering, obtained filter residue is preliminary product.It is cleaned after preliminary product organic solvent or acid solution processing and obtains final products several times.The method of this synthesis silicon micro-nano structure is mutually produced using cryogenic fluid, is suitble to extensive amplification production, economical.It does not need inflammable and explosive silane and does silicon source, without high temperature, high vacuum or high pressure working condition, safety. |
| priorityDate | 2016-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.