| abstract |
An object of the present invention is to provide an aluminum-diamond-based composite which has both high thermal conductivity and a thermal expansion coefficient close to that of a semiconductor element, and which can suppress surface metal even in actual use under high load Expansion of the layer portion, etc. occurs. The present invention provides an aluminum-diamond composite body, characterized in that the first peak of the volume distribution of particle size is located at 5-25 μm, the second peak is located at 55-195 μm, and the area and particle size of the volume distribution with particle size of 1-35 μm The ratio of the area of the volume distribution of 45 to 205 μm is 1 to 9 to 4 to 6, and the aluminum-diamond composite contains 65 to 80 vol% of diamond powder having a circularity of 0.94 or more, and the remainder is composed of Metal composition of aluminum. |