| abstract |
The invention discloses a nanometer thin-film memristor, which comprises a substrate, on which a lower electrode, a memory storage layer, and an upper electrode are sequentially formed; the memory storage layer is successively composed of aluminum oxide film, hafnium oxide/ Zinc oxide or hafnium oxide/aluminum oxide coupled double-layer film; the invention also discloses a method for preparing a memristor, using plasma-enhanced atomic layer deposition to first prepare titanium nitride on the lower electrode; adopting atomic layer deposition technology, nitriding the lower electrode The memory storage layer is sequentially deposited and grown on the titanium layer; the upper electrode of the memristor is formed by means of DC sputtering, physical vapor deposition or photolithography; the memristor structure of the present invention exhibits excellent simulated neural Synaptic learning and memory functions; at the same time, it has polymorphic storage functions and the ability to simulate neural synapses. The manufacturing process is simple and reliable, and it can achieve high aspect ratio step coverage, which is convenient for large-scale industrial production. |