http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106206438-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0921 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7849 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823892 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2015-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106206438-B |
| titleOfInvention | Methods and structures for FinFET devices |
| abstract | The present invention discloses a semiconductor device and a method for forming the same. The method includes receiving a substrate having fins that protrude through isolation structures over the substrate; etching portions of the fins to create trenches; forming a layer of doped material on sidewalls of the trenches; and At least one epitaxial layer is grown in it. The method also includes exposing a first portion of the at least one epitaxial layer over the isolation structure; and performing an annealing process to drive dopants from the doped material layer into the second portion of the at least one epitaxial layer. A first portion of the at least one epitaxial layer provides a strained channel for the semiconductor device, and a second portion of the at least one epitaxial layer provides a punch-through stop. Embodiments of the invention also relate to methods and structures for FinFET devices. |
| priorityDate | 2015-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.