http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106169523-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3324874e239be951fdf2bdc15304fb8e
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
filingDate 2016-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42094f0b7a1dbafe89d9d2e0f08f2bce
publicationDate 2016-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-106169523-A
titleOfInvention LED that a kind of L of employing MBE and MOCVD technology grow on a si substrate and preparation method thereof
abstract The invention discloses a kind of L of employing MBE and LED that MOCVD technology grows on a si substrate, the monocrystalline Al thin film including Si substrate and grown the most successively, AlGaN cushion, n GaN layer, InGaN/GaN MQWs quantum well layer and p GaN layer;It is gradually lowered from monocrystalline Al thin film content of Al component in the direction of n GaN layer, AlGaN cushion;Described monocrystalline Al thin film is to use the growth of L MBE method, and described AlGaN cushion, n GaN layer, InGaN/GaN MQWs quantum well layer and p GaN layer are to use the growth of MOCVD method.Invention also discloses the preparation method of this LED.LED prepared by the present invention, crystal mass is high, and defect concentration is low, has the electrical and optical properties of excellence.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113106542-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111739791-A
priorityDate 2016-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/taxonomy/TAXID417954
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID15051
http://rdf.ncbi.nlm.nih.gov/pubchem/anatomy/ANATOMYID417954
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419518858
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419550829
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID222

Total number of triples: 21.