http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106169523-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3324874e239be951fdf2bdc15304fb8e |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
filingDate | 2016-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42094f0b7a1dbafe89d9d2e0f08f2bce |
publicationDate | 2016-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-106169523-A |
titleOfInvention | LED that a kind of L of employing MBE and MOCVD technology grow on a si substrate and preparation method thereof |
abstract | The invention discloses a kind of L of employing MBE and LED that MOCVD technology grows on a si substrate, the monocrystalline Al thin film including Si substrate and grown the most successively, AlGaN cushion, n GaN layer, InGaN/GaN MQWs quantum well layer and p GaN layer;It is gradually lowered from monocrystalline Al thin film content of Al component in the direction of n GaN layer, AlGaN cushion;Described monocrystalline Al thin film is to use the growth of L MBE method, and described AlGaN cushion, n GaN layer, InGaN/GaN MQWs quantum well layer and p GaN layer are to use the growth of MOCVD method.Invention also discloses the preparation method of this LED.LED prepared by the present invention, crystal mass is high, and defect concentration is low, has the electrical and optical properties of excellence. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113106542-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111739791-A |
priorityDate | 2016-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.