| abstract |
The present disclosure provides semiconductor devices having multiple gate structures. A semiconductor device includes: a substrate having a first region and a second region; a plurality of first gate structures, in the first region, the first gate structures are spaced apart from each other by a first distance; a plurality of second gate structures, In the second region, the second gate structures are spaced apart from each other by a second distance; a first spacer on a sidewall of the first gate structure; a dielectric layer on the first spacer; and a second spacer on on the sidewalls of the second gate structure; and a third spacer on the second spacer. |