http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106169425-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823892 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2016-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106169425-B |
| titleOfInvention | Punching through doped layer without implantation material and formed for bulk fin field effect transistor structure |
| abstract | The present invention relates to a kind of punching through doped layer without implantation material and formed for bulk fin field effect transistor structure.Using doped oxide, is formed in bulk fin field effect transistor structure and punch through stop layer.By annealing, admixture is driven to enter the base part of substrate and brilliant fin.Punching through stop layer includes the anti-n-type area of p-type area, this two Qu Douke substantially equal distance protrudes into semiconductor die fin. |
| priorityDate | 2015-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.