| abstract |
Disclosed invention relates to the high-voltage switch gear of advanced person, and it has the Performance Characteristics of improvement, the reliability of raising and preferably compatible compared with regular grid driver.Inventions disclosed herein achieves hybrid switch that control, that include high pressure normal open SiC VJFET via the low pressure Si MOSFET in cascade (Bali adds (Baliga pair)) structure.SiC VJFET and Si MOSFET monolithically integrates with wafer scale, and wherein, Si MOSFET manufactures on Si layer, described Si layer and the dielectric layer direct neighbor on SiC VJFET.Additionally provide the method manufacturing and operating these switches. |