http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106147604-B
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-62 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-46 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D1-00 |
filingDate | 2015-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2019-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2019-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-106147604-B |
titleOfInvention | It is used to form the constituent of silicon dioxide layer, the method for manufacturing silicon dioxide layer, silicon dioxide layer and electronic device |
abstract | The present invention relates to a kind of constituent for being used to form silicon dioxide layer, the method for manufacturing silicon dioxide layer, silicon dioxide layer and electronic devices.The constituent for being used to form silicon dioxide layer includes silicon-containing polymer and solvent, wherein the silicon-containing polymer exists 1 There is the summation of the Si-H integrated value less than or equal to 12 in H-NMR spectrum.It the Si-H integrated value described and calculates under conditions of describing in the description.The constituent for being used to form silicon dioxide layer of the invention can reduce the amount of the outlet generated during curing, obtain the silicon dioxide layer with minimum defect. |
priorityDate | 2015-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 97.