http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106145692-B

Outgoing Links

Predicate Object
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C17-25
filingDate 2015-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-106145692-B
titleOfInvention Large area monocrystalline porous titanium dioxide thin-film and the preparation method and application thereof
abstract The invention discloses a kind of large area monocrystalline porous titanium dioxide thin-films and the preparation method and application thereof.The preparation method includes: to be deposited with TiO using hydro-thermal method 2 The conductive substrates surface of seed layer grows highly oriented porous titanium dioxide thin-film;And calcination processing is carried out to the highly oriented porous titanium dioxide thin-film, obtain monocrystalline porous titanium dioxide thin-film.Preferably, surface treatment and expanding treatment can be also carried out to the monocrystalline porous titanium dioxide thin-film, obtain the different large area monocrystalline porous titanium dioxide thin-film of pore-size.Preparation method of the present invention is easy to operate, it is low in cost, there is preferable controllability, and obtained monocrystalline porous titanium dioxide thin-film has controllable film thickness and pore-size, and compared with high orientation and high-specific surface area, while also having less crystal boundary and defect, provide effective electron propagation ducts, therefore also there is high electron transfer rate, suitable for being widely applied in the opto-electronic device, such as can be used for the light anode of photoelectric device.
priorityDate 2015-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 38.