http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106129172-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1868 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2016-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106129172-B |
| titleOfInvention | A surface passivation method for crystalline silicon solar cells with adjustable charge density |
| abstract | The invention discloses a surface passivation method of crystalline silicon solar cells with adjustable charge density. A quantum well structure composed of metal oxide nano-lamination films is formed on the surface of crystalline silicon solar cells through atomic layer deposition technology. The quantum well nano The stacked layers are tunneling layer, trapping layer and blocking layer in turn; the thickness of the tunneling layer is 2-3nm, and the material is an oxide with a wide band gap; the thickness of the trapping layer is 3-6 nm, and the material is an oxide with a narrow band gap ; The thickness of the blocking layer is 5-10nm, and the material is an oxide with a wide band gap; the electrons are written into the trapping layer, and the writing process requires a positive bias pulse at the electrode end, the voltage range is between 6-15V, and the voltage pulse is between 6-15V Between 100ns‑100ms. The beneficial effect of adopting the technical solution of the present invention is that the charge density in the passivation layer of the solar cell can be adjusted according to the level of the writing voltage and the duration of the pulse, and the density can be between 10 13 ‑10 19 cm ‑2 Arbitrary adjustment between to achieve the optimal passivation effect. |
| priorityDate | 2016-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.