http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106104773-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-542 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2013 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2059 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2031 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2013 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-46 |
| filingDate | 2015-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106104773-B |
| titleOfInvention | Crystal growth controlling agent, the forming method of p-type semiconductor particulate or p-type semiconductor particulate film, hole transmission layer formation composition and solar cell |
| abstract | First, the present invention provides a kind of crystalline size increase that can suppress p-type semiconductor and the crystal growth controlling agent of chemical modification, the p-type semiconductor particulate or forming method of p-type semiconductor particulate film for having used the crystal growth controlling agent, the hole transmission layer formation composition of the solar cell and solar cell for having used the hole transmission layer formation composition that can carry out p-type semiconductor microparticle surfaces.Second, the present invention provides the crystallization that can also promote p-type semiconductor in the case of the organic salt (ionic liquid) with the anion in addition to thiocyanate ion is used and miniaturization and can carry out the hole transmission layer formation composition of the chemical modification of p-type semiconductor microparticle surfaces and use the solar cell of the hole transmission layer formation composition.The crystal growth controlling agent of the present invention is included selected from the dissociation by proton or cation to generate at least one kind of sulfur-containing compound in the compound of mercaptide anion and disulfide compound (but except rhodanate.), and control the crystal growth of p-type semiconductor. |
| priorityDate | 2014-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 194.