| abstract |
The invention relates to an organic field effect transistor sensor with a micro-nano pore structure and its production and application. The sensor includes a substrate layer, evaporated on the upper surface of the substrate layer, and a naphthothiophenone layer with a micro-nano pore structure as an organic semiconductor layer. The gold thin film plated on the upper surface of the organic semiconductor layer is used as the source electrode and the drain electrode, and the fabricated sensor can be used for gas or powder detection. Compared with the prior art, the invention greatly improves the sensing performance and sensitivity, and is more convenient and quick to use. |