http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106098623-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-78 |
| filingDate | 2016-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106098623-B |
| titleOfInvention | Semiconductor devices and its manufacturing method with high quality epitaxial layer |
| abstract | Disclose semiconductor devices and its manufacturing method with high quality epitaxial layer.According to embodiment, which may include: substrate；The first semiconductor layer of fin-shaped being spaced with substrate, wherein the first semiconductor layer extends along curved longitudinal extension；And the second semiconductor layer at least partially about the first semiconductor layer periphery. |
| priorityDate | 2016-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.