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filingDate 2010-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-106057819-B
titleOfInvention semiconductor device
abstract The present invention relates to logic circuits and semiconductor devices. In logic circuits where clock gating techniques are implemented, stored power is reduced or faults are suppressed. The logic circuit includes a transistor, which is in an off state when a potential difference exists between the source terminal and the drain terminal during a period in which a clock signal is not supplied. The channel formation region of the transistor is formed using an oxide semiconductor in which the hydrogen concentration is reduced. Specifically, the hydrogen concentration of the oxide semiconductor is 5×10 19 atoms/cm 3 or less. Therefore, the leakage current of the transistor can be reduced. As a result, in this logic circuit, reduction of stored power and suppression of failures can be achieved.
priorityDate 2009-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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