http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106057793-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 |
| filingDate | 2016-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106057793-B |
| titleOfInvention | Semiconductor device and method for manufacturing semiconductor device |
| abstract | A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes: a substrate including a first active pattern and a second active pattern thereon; a first gate electrode intersecting the first active pattern and the second active pattern; a first source/drain a gate region and a second source/drain region, respectively, on the first active pattern and the second active pattern on one side of the first gate electrode; and an active contact, on the first source/drain region is electrically connected to the first source/drain region. The active contact includes a first sub-contact and a second sub-contact. The second sub-contact includes a vertical extension extending vertically toward the substrate. The bottom surface of the vertical extension is lower than the bottom surface of the first sub-contact. |
| priorityDate | 2015-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.