http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106057732-B

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 2016-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-106057732-B
titleOfInvention The manufacturing method of switch matrix based on TSV technology and LTCC technology
abstract The invention discloses a kind of manufacturing methods of switch matrix based on TSV technology and LTCC technology, it is characterized in that based on TSV technology on the silicon chip of twin polishing, by techniques such as deep silicon etching, plating, grinding and polishing, stackings, the radio frequency unit of switch matrix is obtained;Based on LTCC technology on ceramic chips, by techniques such as punching, filling perforation, printing, lamination, lamination, sintering, the control unit of switch matrix is obtained;By radio frequency unit and control unit High Density Integration, the switch matrix that integrated level is high, loss is small is obtained.Switch matrix of the present invention has the advantages that integrated level is high, loss is small, generalization degree is high.This method processing consistency is good, especially suitable for the miniaturized application of the systems/subsystems such as microwave, millimetre-wave attenuator, radar, belongs to realization miniaturization, high performance microwave communication, radar system/subsystem key technology.
priorityDate 2016-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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