| abstract |
The present invention describes a tunneling field effect transistor (TFET) comprising a variable bandgap channel. In some embodiments, one or more bandgap properties of the variable bandgap channel can be dynamically changed by at least one of the application or removal of a force, such as a voltage or an electric field. In some embodiments, a variable bandgap channel can be configured to modulate from an on-to-off state, and vice versa, in response to application and/or removal of a force. A variable bandgap channel may exhibit a smaller bandgap in the on state than in the off state. As a result, TFETs may exhibit one or more of relatively high on-current, relatively low off-current, and subthreshold swing below 60 mV/decade. |