| abstract |
The present invention provides a photo-sensitized chemically amplified resist material, a pattern forming method using the photo-sensitized chemically amplified resist material, a semiconductor device, a mask for photolithography, and a template for nanoimprint. The photo-sensitized chemically amplified resist material of the present invention is used in a two-stage exposure photolithography process, and includes: (1) a basic component capable of developing; and (2) a component that generates a photosensitizer and an acid through exposure. The above-mentioned components contain only (a) component among the three components of (a) acid-photosensitizer generator, (b) photosensitizer precursor, and (c) photoacid generator, or contain any two of them. Components, or all of the components (a) to (c). |