| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823493
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11563
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11517 |
| filingDate |
2016-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2019-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-106024793-B |
| titleOfInvention |
Semiconductor device |
| abstract |
The present invention provides a semiconductor device including a memory region and a logic region. The storage region includes transistors (storage transistors) that store information by accumulating charges into the sidewall insulating films. The width of the sidewall insulating film of the memory transistor included in the storage region is made larger than the width of the sidewall insulating film of the transistor (logic transistor) included in the logic region. With the present invention, a transistor exhibiting an excellent programming speed as a memory transistor and a semiconductor device including such a transistor can be realized. |
| priorityDate |
2015-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |