| abstract |
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for depositing metal tungsten, which can be applied in the preparation process of three-dimensional memory, by adding a metal tungsten metal gate as a nucleation layer after the metal tungsten grid is etched The selective growth process of the metal tungsten grid can extend the cross-sectional length of the metal tungsten grid, improve the depression caused by the etching of the metal tungsten grid, improve the structure, reduce the resistance of the metal tungsten grid, and lay a good foundation for the subsequent process. |