http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106008327-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D213-22 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D213-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G29-00 |
| filingDate | 2016-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106008327-B |
| titleOfInvention | A kind of organic inorganic hybridization bismuth iodine anion cluster base semiconductor material |
| abstract | The invention discloses a kind of organic inorganic hybridization bismuth iodine anion cluster base semiconductor materials and preparation method thereof.The organic inorganic hybridization semi-conducting material, molecular structural formula are (MV) 2 (Bi 4 I 16 ), MV is the organic cation methyl viologen of two unit positive charges of the band, (Bi in the material in formula 4 I 16 ) anion be then trivalent bismuth ion and iodide ion coordination constitute four core clustering architecture anion.Complexation reaction occurs by the solution of bismuth iodide and methyl viologen iodide, semiconducting behavior and the good organic inorganic hybridization semi-conducting material of thermal stability are prepared conveniently and inexpensively, its energy gap is moderate, thermal stability is good, can be applied to photoelectron material technical field. |
| priorityDate | 2016-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.