http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105990226-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate | 2015-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105990226-B |
| titleOfInvention | A kind of production method of interconnection structure, semiconductor devices and electronic device |
| abstract | The present invention provides a kind of production method of interconnection structure comprising following step: step a: forming porous ultralow K dielectric film on a semiconductor substrate, the ultralow K dielectric film is SiCOH thin film；Step b: H is used 2 Porous ultralow K dielectric film described in corona treatment, to remove pore-foaming agent；Step c: the porous ultralow K dielectric film described in He corona treatment, so that Si-CH3 changes Si-CHx, wherein x is less than or equal to 2；Step d: the porous ultralow K dielectric film described in ultraviolet light to remove remaining pore-foaming agent, and realizes crosslinking.In summary, the production method of interconnection structure according to the present invention, rich carbon pore-foaming agent remnants can be made to greatly reduce, to reduce Leakage Current, breakdown voltage is improved, simultaneously because forming more Si-CHx-Si crosslinkings, on the one hand enhances the plasma resistant damage performance and model-performance of film, on the other hand, the hydrophily of film is reduced. |
| priorityDate | 2015-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.