http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105980596-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3464 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0641 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0688 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3485 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 |
| filingDate | 2014-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105980596-B |
| titleOfInvention | Coated substrate forms modulation method in the plane to provide control |
| abstract | The method that modulation is formed in the plane that this disclosure provides coated substrates to provide control.This method includes providing the first target of the first material or material compositions, provides the second target (104,204,304) of the second material or material compositions different from the first material or material compositions；Activate the first target and the second target (103,104；203、204；303,304) to pass through evaporation, distillation or sputtering release particle；And cause in discharged particles hit to substrate (102,202,302) so that substrate is coated.Target (103,104；203、204；303,304) in one activation include that a series of sensitizing pulse is provided so that evaporation, distillation or the sputtering of the pulse of particle are provided, and target (103,104；203、204；303,304) in the other is generally passive state.First and second target materials or material compositions are presented：Corresponding homologous temperature is defined as base reservoir temperature (Ts) and has minimum melting temperature (Tm i ) target material (i) target material melting temperature (Tm i ) ratio (Ts/Tm i )；Compatibility (Δ H Mixing AB ), by the enthalpy of mixing of target material or material compositions define, wherein material more than zero enthalpy of mixing be defined as unmixing and material minus enthalpy of mixing be defined as it is miscible；And two dimensional mode or three dimensional growth mode.In the method, homologous temperature more than 0.1 and is less than 0.5, and the amount of the material deposited from each target material per train of pulse is more than 0.1 single layer and is less than 100 single layers, preferably less than 50 single layers, is less than 10 single layers or is less than 2 single layers. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110578131-A |
| priorityDate | 2014-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.