| abstract |
The present invention provides a vertical channel flexible organic light-emitting field-effect transistor, comprising a drain electrode (1), a drain electrode modification layer (2), a light-emitting layer (3), a field-effect semiconductor layer (4), and a hole transport layer (5), source electrode (6), insulating layer (7), gate electrode (8), flexible substrate (9); wherein: flexible substrate, gate electrode, insulating layer, source electrode, hole transport layer, field Effect semiconductor layer, light-emitting layer, drain electrode modification layer and drain electrode are stacked in sequence; the material constituting the gate electrode is ITO, the material constituting the drain electrode is silver nanowires, the material constituting the drain electrode modification layer is LiF, and the material constituting the light-emitting layer is The material is Alq3, the material constituting the field effect semiconductor layer is copper phthalocyanine, the material constituting the hole transport layer is NPB, the constituting the source electrode is mesh metal gold, the material constituting the insulating layer is PVA, and the material constituting the substrate is PI. Or PET. |