| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a62555ff12316a9a118542896b4c0af7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2016-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea839fc6ae59cd12ee620875db8b77a6 |
| publicationDate |
2016-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-105977164-A |
| titleOfInvention |
A kind of thin film transistor and its manufacturing method, array substrate and display panel |
| abstract |
The invention discloses a thin film transistor and its manufacturing method, an array substrate and a display panel, which are used to save the process of plasma treatment on the semiconductor oxide active layer, thereby avoiding the damage to the semiconductor oxide active layer during the plasma treatment process. destroy. The manufacturing method of the thin film transistor includes forming a pattern of a semiconductor oxide active layer on a base substrate, and the method also includes: forming an amorphous carbon film layer on the non-channel region of the semiconductor oxide active layer The pattern of the source electrode and the drain electrode are formed on the pattern of the amorphous carbon film layer, and the source electrode and the drain electrode are electrically connected to the semiconductor oxide active layer through the amorphous carbon film layer respectively. connect. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10211342-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107170835-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018000947-A1 |
| priorityDate |
2016-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |