http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105914298-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D401-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D409-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6572 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D209-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D409-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D209-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D401-14 |
| filingDate | 2016-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105914298-B |
| titleOfInvention | Polymer Photovoltaic Cell Using Isoindigo Derivatives as Cathode Interface Modification Layer |
| abstract | The invention relates to a polymer photovoltaic cell using isoindigo derivatives (which are soluble in alcohol/water) as a cathode interface modification layer, belonging to the technical field of polymer photovoltaic cells. The isoindigo derivative interface modification layer is located between the active layer and the cathode of the photovoltaic cell, which can effectively improve the energy conversion efficiency of the device. The device structure includes in turn: ITO attached to the transparent glass as the anode, PEDOT:PSS as the anode modification layer, PTB7:PC 71 BM as the active layer, including the material containing isoindigo derivatives described in the present invention as the cathode interface modification layer , metal Al as the cathode. The photovoltaic device with PTB7:PC 71 BM as the active layer, after adding the compound IIDTh-C 6 NSB of the present invention with a thickness of 8 nanometers as the cathode interface modification layer, the performance of the device is significantly improved, and the current density is raised from 13.98mA cm -2 to 16.90 mA cm ‑2 , the voltage increased from 0.65V to 0.75V, the fill factor increased from 54.0% to 71.6%, and the photoelectric conversion efficiency increased from 5.12% to 9.08%. |
| priorityDate | 2016-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 80.