http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105908127-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 |
| filingDate | 2016-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105908127-B |
| titleOfInvention | A kind of p-type doping electrically conducting transparent stannic oxide film and preparation method thereof |
| abstract | The invention discloses a kind of p-type doping electrically conducting transparent stannic oxide film and preparation method thereof, which is grouped as by the group of following atomicity percentage: O 62%~70%, remaining is Sn and doped chemical；The doped chemical is any one or more in B, Al, Ga, In, Zn, and the atomicity of doped chemical is the 3%~6% of Sn and doped chemical total atom number.P-type doping electrically conducting transparent stannic oxide film of the invention, using any one or more doping stannic oxide in B, Al, Ga, In, Zn, the transparent conductive film of formation is Stable Type p semiconductor, and average visible photopic light transmitance is up to 80% or more, and optimum resistance rate is up to 10 ‑4 Ω .cm, ingredient is simple, and photoelectric properties are excellent, and preparation process is flexible, is readily produced, and can be widely applied to a variety of photoelectric devices such as solar battery, function window, wide market. |
| priorityDate | 2016-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.