http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105843700-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F11-1068 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06F11-10 |
| filingDate | 2016-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105843700-B |
| titleOfInvention | A kind of controller |
| abstract | The present invention provides a kind of controller, the controller includes: bad-block managing unit, and for obtaining bad block list, the bad block list is stored to random access memory ram；Bad block map unit, when determining the operation address of current block Block not in the bad block list using bad block mapping method, it is determined that the current block Block has been block；Error-detection error-correction unit, for carrying out error-detection error-correction to read-write data when the controller is written and read；Wherein, RAM output ram_dout with and address ram ram_addr be located at the same clock cycle；In this way, RAM output ram_dout with and address ram ram_addr be located at the same clock cycle, it is possible to determine bad block within a clock cycle, and then improve the speed of read-write operation；And the error-detection error-correction unit can be to correct out 1 dislocation in 512 bytes in data length, detect 2 dislocations, improve error-detection error-correction efficiency, further ensure the reliability of NAND FLASH chip. |
| priorityDate | 2016-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID408137958 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID2789 |
Total number of triples: 12.