| abstract |
The invention discloses a semiconductor element and a manufacturing method thereof. Its manufacturing method is to firstly provide a substrate with a first gate layer, a first dielectric layer and a shallow trench isolation (shallow trench isolation, STI) surrounding the substrate, the first gate layer and the substrate. first dielectric layer. Then remove the first dielectric layer, form a first spacer on the shallow trench isolation sidewall above the first gate layer, and use the first spacer as a mask to remove part of the first gate layer and part of the substrate to form a The first opening simultaneously defines a first gate structure and a second gate structure. |