http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105826265-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2015-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105826265-B |
| titleOfInvention | The forming method of semiconductor devices |
| abstract | The present invention provides a kind of forming method of semiconductor devices, comprising: on a semiconductor substrate formed work-function layer after, form buffer layer in the work-function layer, the work-function layer Doped ions for being covered with the buffer layer backward.During to the work function doping ion, the buffer layer can stop the ion, to reduce the amount for the ion being doped into the work-function layer, to adjust the work function of the work-function layer；And by adjusting the material of the buffer layer, and the amount for the ion that the buffer layer stops is adjusted in the mode of thickness, to adjust the amount for the ion being doped into the work-function layer, to adjust the work function of the work-function layer, and then the threshold voltage for the semiconductor devices being subsequently formed is adjusted.Compared with the prior art, above-mentioned technical proposal can simplify the adjusting process of the work function of work-function layer, and then can simplify the semiconductor device technology that preparation has different threshold voltages. |
| priorityDate | 2015-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.