http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105814676-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N15-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02598 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-04 |
| filingDate | 2014-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105814676-B |
| titleOfInvention | The defect density evaluation method of monocrystalline silicon substrate |
| abstract | The present invention provides a kind of defect density evaluation method of monocrystalline silicon substrate, it is the method that the defect density formed in monocrystalline silicon substrate to the irradiation by particle beam is evaluated, after the resistivity to the monocrystalline silicon substrate is measured, the particle beam is irradiated to the monocrystalline silicon substrate, after the irradiation, the resistivity of the monocrystalline silicon substrate is measured again, according to the determination of resistivity result after the pre-irradiation of the particle beam, the carrier concentration in the monocrystalline silicon substrate after pre-irradiation is found out respectively, and calculate the change rate of carrier concentration, according to the change rate of the carrier concentration, irradiation by the particle beam is formed in the monocrystalline silicon substrate, and the concentration for the VV defects being made of silicon atom vacancy is evaluated.A kind of method that the concentration that the VV defects in monocrystalline silicon substrate can be formed in the irradiation by particle beam carries out simple evaluation is provided as a result,. |
| priorityDate | 2013-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.