http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105814668-B
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1436 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
filingDate | 2014-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2018-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2018-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-105814668-B |
titleOfInvention | The chemical-mechanical polishing compositions and method of silicon nitride are removed for selectivity |
abstract | The present invention is provided to polish the chemical-mechanical polishing compositions and method of the substrate for including silica and silicon nitride, provides on patterned chip and removed relative to the selectivity to SiN of Si oxide (for example, PETEOS).In one embodiment, CMP method includes with substrate surface of the CMP composition grinding comprising SiN and Si oxide to remove at least some SiN from it.The CMP composition includes following substance, substantially by following material composition or by following material composition:The particulate abrasive (for example, cerium oxide) being suspended in aqueous carrier, and containing the cation type polymer through the quaternized heteroaromatic overhang of nitrogen-is carried, the wherein pH of the composition is more than 3. |
priorityDate | 2013-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.