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filingDate 2014-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-105810649-B
titleOfInvention Semiconductor device bonding structure and its bonding method
abstract The present invention relates to a kind of semiconductor device bonding structure and its bonding method, the bonding structure includes:The first metal layer, the first metal layer surface have the first weld pad, and first weld pad has the first patterns of openings;Second metal layer, the second metal layer surface have the second weld pad, and second weld pad has the second patterns of openings;The first metal layer is connected with the second metal layer surface bond, second patterns of openings of first weld pad and the bonding connection of corresponding second weld pad consistency from top to bottom, the first patterns of openings of first weld pad and second weld pad mutually staggers in bond contact face.
priorityDate 2014-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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