| abstract |
The invention provides a method for preparing an In - doped MoO3 thin film and its application in QLEDs. The preparation method of the In - doped MoO3 thin film includes the following steps: providing indium salt and MoO3 , dissolving the indium salt and MoO3 in an organic solvent to form a mixed solution, adding an inorganic acid to the mixed solution performing heat treatment to obtain a precursor solution, wherein the temperature of the heat treatment is 50-80°C; providing a substrate, depositing the precursor solution on the substrate by a solution processing method, and then performing annealing treatment to obtain In doped MoO 3 thin film, wherein the annealing temperature is 150-350°C, and the time is 15-30min. |