http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105789280-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43 |
| filingDate | 2014-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105789280-B |
| titleOfInvention | High voltage semiconductor device and its manufacturing method |
| abstract | It includes: substrate that the present invention, which provides a kind of high voltage semiconductor device and its manufacturing method, the high voltage semiconductor device,；Epitaxial layer is set on substrate and has the first conductive type；Gate structure is set on epitaxial layer；The first conductive type the first high pressure wellblock and the second conductive type high pressure wellblock, are respectively arranged in the epitaxial layer of gate structure two sides, wherein the first conductive type is different with the second conductive type；Source area and drain region are respectively arranged in the epitaxial layer of gate structure two sides；And stacked structure, it is set between gate structure and drain region, wherein stacked structure includes: barrier layer；Insulating layer is set on barrier layer；And conductive layer, it is set on insulating layer, and be electrically connected source area or gate structure.The present invention can reduce the electric field density in channel in epitaxial layer by the stacked structure including conductive layer, and then reduce the conducting resistance of high voltage semiconductor device. |
| priorityDate | 2014-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.