http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105789047-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66431 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate | 2016-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105789047-B |
| titleOfInvention | A kind of preparation method of enhanced AlGaN/GaN high electron mobility transistor |
| abstract | The present invention provides a kind of enhanced AlGaN/GaN high electron mobility transistor preparation methods, method successively grows GaN or AlN nucleating layer, GaN buffer layer, GaN channel layer, AlN insert layer, AlGaN potential barrier and InGaN cap layers on a substrate, and source electrode and drain electrode is made in AlGaN potential barrier, and grid is made in InGaN cap layers, obtain enhanced AlGaN/GaN high electron mobility transistor.InGaN cap layers in the present invention contain a large amount of vacancy In, since a large amount of presence in the vacancy In can adsorb electronics, electronegativity is presented in entire cap layers, in this way raise barrier layer conduction level, to exhaust the two-dimensional electron gas of channel, it realizes the enhanced of device, and avoids the difficult point of traditional p-type cap layers high concentration p doping relatively difficult to achieve, enhance the operability of device preparation. |
| priorityDate | 2016-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.