http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105766070-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2203-0502 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2203-0384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-0306 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-067 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-061 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-032 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-06 |
| filingDate | 2014-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105766070-B |
| titleOfInvention | The manufacturing method and circuit substrate of circuit substrate |
| abstract | The circuit substrate that can be manufactured the present invention relates to a kind of manufacturing method of circuit substrate and by such method, the manufacturing method of circuit substrate include: to prepare the process for the substrate at least containing silicon on surface；The process of paste (4) of the coating comprising aluminum particulate on the substrate；The process for forming conductor layer (5) on the substrate and being burnt into the substrate for being coated with the paste (4)；The process of the etchant resist (6) of specific pattern is formed in the conductor layer (5)；And the process that the conductor layer (5) of the part of the not formed etchant resist (6) is removed by etching solution, the etching solution include the metal ion and fluoride ion that standard electrode potential takes the metal M of the value bigger than the standard electrode potential of aluminium. |
| priorityDate | 2013-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 70.