| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7809
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2014-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2019-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-105765718-B |
| titleOfInvention |
Vertical Trench MOSFET Devices in Integrated Power Technology |
| abstract |
In the depicted example, a semiconductor device (100) having a vertical drain extended MOS transistor (110) may be formed by forming a deep trench structure (104) to define at least one vertical drift region (108), the vertical drift region 108 is adjacent to the deep trench structure (104) on at least two opposing sides. The deep trench structure (104) includes a dielectric liner (124). Deep trench structures (104) are spaced to form RESURF regions for drift regions (108). A vertical gate (114) is formed in a vertically oriented gate trench in a dielectric liner (124) of a deep trench structure (104) adjoining the vertical drift region (108). The body implant mask for implanting dopants into the transistor body (118) also serves as an etch mask for forming vertically oriented gate trenches in the dielectric liner (124). |
| priorityDate |
2013-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |