| abstract |
The invention relates to a superlattice-like tin-selenium/antimony nanophase-change film. The phase-change film includes SnSe2 material and simple Sb material. The two materials form a superlattice-like structure through alternate superposition. The structure of the phase-change film The general formula is [SnSe 2 (a)/Sb(b)] x , the total thickness of the superlattice-like phase change film is 40-60nm, where a is the thickness of the SnSe 2 material in each phase change film, and a is 8~12nm, b is the thickness of the single substance Sb material in each layer of phase change film, b is 1.5~3nm, x is the period number of superlattice phase change film structure, x is 4 or 5; It is prepared by controlled sputtering method and applied to PCRAM devices. Compared with the prior art, the phase change film of the invention has the advantages of good thermal stability, fast phase change speed, small volume change, low power consumption, etc., and has excellent comprehensive performance. |