http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105762205-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-072 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2016-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105762205-B |
| titleOfInvention | A kind of P-type crystal silicon solar cell with transparency electrode and preparation method thereof |
| abstract | The present invention discloses a kind of P-type crystal silicon solar cell with transparency electrode and preparation method thereof, and solar cell from top to bottom includes successively：Front metal electrode, front transparent conducting film, front surface antireflection film/passivating film, N-type layer, P-type silicon matrix and battery back electrode；Front electrode is that described N-type layer surface forms local heavy doping N+ areas according to regular pattern, and described front transparent conducting film is directly contacted with local heavy doping N+ areas, and local heavy doping N+ areas are connected to become front electrode by front transparent conducting film.The battery is used with the nesa coating of silicon substrate localized contact as the front of solar cell or backing transparent electrode, is advantageous to nesa coating and is formed good Ohmic contact with silicon substrate. |
| priorityDate | 2016-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.