| abstract |
The invention provides a semiconductor device. In the package (PA) of the semiconductor device (SM1), a semiconductor chip (4PH, 4PL) formed with a power metal oxide half field effect transistor and a semiconductor chip (4D) formed with a control circuit for controlling its operation are packaged, and the semiconductor chip (4PH, 4PL, 4D) are respectively mounted on die pads (7D1, 7D2, 7D3). The bonding pads (12S1, 12S2) for the source electrodes of the high-side semiconductor chip (4PH) are electrically connected to the die pad (7D2) via the metal plate (8A). On the upper surface of the die pad (7D2), there are provided a plating layer (9b) formed in a region where the semiconductor chip (4PL) is mounted, and a plating layer (9c) formed in a region where the metal plate (8A) is bonded, The electroplating layer (9b) and the electroplating layer (9c) are separated by a region where no electroplating layer is formed. The invention can improve the reliability of semiconductor devices. |