http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105719972-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2014-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105719972-B |
| titleOfInvention | The forming method of semiconductor structure |
| abstract | The present invention provides a kind of forming methods of semiconductor structure, comprising: provides semiconductor substrate, etches the semiconductor substrate and form fin；Dielectric layer is formed in semiconductor substrate on the fin between the fin；Gas to contain hydrogen fluoride and ammonia carries out the first etching to the dielectric layer in the case where not generating condition of plasma as etching gas, until the surface of the dielectric layer is lower than the fin top.With the etching gas containing hydrogen fluoride and ammonia, etch media layer under conditions of not generating plasma, it can avoid generating the plasma gas containing fluorine ion in the process, to in etch media layer, the fin that exposing can be reduced is corroded by fluorine ion, to reduce damage suffered by fin, the structural form for the fin being subsequently formed is improved. |
| priorityDate | 2014-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.