http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105719970-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2014-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105719970-B |
| titleOfInvention | The production method of MOS transistor |
| abstract | A kind of production method of MOS transistor, comprising: provide semiconductor substrate, the semiconductor substrate includes the first active area and the isolated area adjacent with first active area；Main gate structure is formed on first active area；Groove is formed in the first active area of the main gate structure two sides；The groove surfaces oxide is removed using isotropic dry etch in situ cleaning；Hydrogen baking is carried out to the groove after the isotropic dry etch cleaning in situ；Full semiconductor material layer is filled in the groove after hydrogen baking；Ion implanting is carried out to form source electrode and drain electrode to the semiconductor material layer.Using method of the invention, the degree of passivation at each angle of groove can be reduced, to improve the performance for the source electrode and drain electrode being subsequently formed. |
| priorityDate | 2014-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.