http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105702822-B
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0062 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 |
filingDate | 2016-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2017-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2017-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-105702822-B |
titleOfInvention | A kind of GaAs base high voltage green-yellow light light-emitting diode chip for backlight unit and preparation method thereof |
abstract | A kind of GaAs base high voltage green-yellow light light-emitting diode chip for backlight unit and preparation method thereof, belongs to photoelectron technical field, feature be p It is sequentially depositing to form GaP resistive layers and GaP Window layers in type carrier confining layer, the product of formation exists p GaP resistive layers are also provided between type carrier confining layer and GaP Window layers.Manufacture craft of the present invention is simple, rationally, and manufactured product is high-quality, stably.Series resistance is integrated in LED chip while product reliability is not sacrificed, under the conditions of 20 mA operating currents, the operating voltage of the mil size LED chips of 7 mil × 7 can directly use the drive circuit compatible with GaP base binary system high voltage green-yellow lights LED up to 2.35 more than V. |
priorityDate | 2016-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.