| abstract |
A power semiconductor package is disclosed. The power semiconductor package includes: a lead frame having a partially etched section and at least one non-etched section; a first semiconductor die having a first power transistor and a driver integrated circuit (IC) monolithically formed thereon; A second semiconductor die having a second power transistor; wherein the first semiconductor die and the second semiconductor die are configured for attachment to the partially etched section, and wherein the partially etched section and at least one non-etched section The segments enable the coupling of the first semiconductor die to the second semiconductor die through the legless conductive posts. |